By using an electrochemical gating technique with a new combination ofpolymer and electrolyte, we were able to inject surface charge densities n_2Das high as 3.5 \times 10^15 e/cm^2 in gold films and to observe large relativevariations in the film resistance, DeltaR/R', up to 10% at low temperature.DeltaR/R' is a linear function of n_2D - as expected within a free-electronmodel - if the film is thick enough (> 25 nm), otherwise a tendency tosaturation due to size effects is observed. The application of this techniqueto 2D materials will allow extending the field-effect experiments to a range ofcharge doping where giant conductance modulations and, in some cases, even theoccurrence of superconductivity are expected.
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机译：通过将电化学门控技术与聚合物和电解质的新组合一起使用，我们能够在金膜中注入高达3.5乘以10 ^ 15 e / cm ^ 2的表面电荷密度n_2Das，并观察到膜电阻DeltaR的较大相对变化/ R'，在低温下最高可达10％。DeltaR/ R'是n_2D的线性函数-如在自由电子模型中所预期的-如果膜足够厚（> 25 nm），否则由于尺寸而趋于饱和观察到效果。这项技术在2D材料上的应用将使场效应实验扩展到电荷掺杂的范围，在电荷掺杂中，将有巨大的电导调制，在某些情况下甚至有望出现超导。
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